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BREAKDOWN TRAPPING [1 record]

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Record 1 2004-02-04

English

Subject field(s)
  • Atomic Physics
  • Semiconductors (Electronics)
CONT

Electron trap generation in the gate oxide is a major reliability problem, since it can cause stress-induced leakage current and oxide breakdown. In this paper, traps are created either by the substrate hole injection or the Fowler-Nordheim injection. The attention is focused on how detrapping affects the generated traps. The detrapping is achieved by different techniques, including electron-hole recombination, and field or thermally assisted tunnelling.

Key term(s)
  • de-trapping

French

Domaine(s)
  • Physique atomique
  • Semi-conducteurs (Électronique)
OBS

L'injection et le dépiégeage des charges s'effectue en des temps de l'ordre de 100 ms [...].

Spanish

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