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RESONANT TUNNELING TRANSISTOR [1 record]

Record 1 1994-04-27

English

Subject field(s)
  • Electronic Components
  • Electronic Circuits Technology
  • Semiconductors (Electronics)
CONT

Bell hales has not yet demonstrated a resonant tunneling transistor, but Fujitsu in Japan has built one with the quantum well in the emitter region rather than the base. The resulting lack of symmetry makes the device unsuited for multistate logic. Its main advantage is the potential for greatly increased switching speed; charges travel much faster via tunneling than by ordinary induction.

French

Domaine(s)
  • Composants électroniques
  • Technologie des circuits électroniques
  • Semi-conducteurs (Électronique)
CONT

T1 (Texas Instruments) a procédé à la démonstration d'au moins cinq types de transistors à tunnel de résonance : le transistor bipolaire à tunnel de résonance (RTBT), le transistor à électrons chauds à tunnel de résonance (RHET), le transistor à tunnel de résonance et puits quantique bipolaire (BiQuaRTT), le transistor à tunnel de résonance et effet de champ latéral, et enfin le transistor à tunnel de résonance et effet de champ vertical. La conception de tous ces composants repose sur les effets mécaniques des quanta, et chacun d'eux présente des caractéristiques méritant des recherches plus approfondies.

Spanish

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