TERMIUM Plus®

The Government of Canada’s terminology and linguistic data bank.

SILICON DOUBLE-BASE DIODE [1 record]

Record 1 2008-05-23

English

Subject field(s)
  • Electronic Devices
  • Semiconductors (Electronics)
DEF

A three-terminal semiconductor device exhibiting stable open-circuit, negative-resistance characteristics. The internal construction consists of a uniformly doped n-type, single-crystal semiconductor with ohmic contacts at each end and the emitter wire attached between them. It is ideal for use in simple precision relaxation oscillators that generate a short intense current pulse at the end of each cycle.

French

Domaine(s)
  • Dispositifs électroniques
  • Semi-conducteurs (Électronique)
CONT

Le transistor unijonction, ou UJT [...], est un dispositif comportant deux bases B1 et B2 entre lesquelles est placée une résistance de silicium de type N [...] appelée résistance interbase [...]

OBS

L'équivalent français du sigle UJT est TUJ, lequel est peu utilisé.

Spanish

Campo(s) temático(s)
  • Dispositivos electrónicos
  • Semiconductores (Electrónica)
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