TERMIUM Plus®

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PIEGEAGE PROFOND [1 record]

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Record 1 2009-10-15

English

Subject field(s)
  • Physics of Solids
  • Semiconductors (Electronics)
CONT

The slow decay of the primary photocurrent is attributed to deep trapping of electrons. It is suggested that the time-limiting process for the decay is thermal emission from traps in a depth of 0.5 to 0.65 eV below the mobility edge.

French

Domaine(s)
  • Physique des solides
  • Semi-conducteurs (Électronique)
CONT

Dans le cas des SC [semiconducteurs] le piégeage profond : une charge est dans un premier temps capturée sur un piège profond. Celle-ci peut ensuite, au bout d'un certain temps (quelques ms), se recombiner avec une charge opposée : on parle de recombinaison indirecte. Ce processus est de loin le plus courant [...]

Spanish

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