TERMIUM Plus^®

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GaAlAs means :gallium aluminium, arsenide.  2, record 1, English, - GaAlAs%20injection%20laser

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GaAlAs signifie : gallium, aluminium, arséniure.  1, record 1, French, - laser%20%C3%A0%20injection%20en%20GaAlAs

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A GaAs FET... is simply a [field effect transistor] with a diode gate structure... made from gallium arsenide(GaAs)...  2, record 2, English, - gallium%20arsenide%20field%20effect%20transistor

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The new Gallium Arsenide Phosphide Photo Diode, or GPD for short, is 1000 times faster in response than the CdS cells still used in the majority of cameras.  1, record 3, English, - Gallium%20Arsenide%20Phosphide%20Photo%20Diode

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La plupart des nouveaux appareils photo 24 X 36 sont des modèles automatiques, comportant (...) une cellule au silicium ou au Ga As P (phospho-arséniure de gallium).  1, record 3, French, - cellule%20au%20phospho%2Dars%C3%A9niure%20de%20gallium

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The urgent search for more efficient solar cells has recently focused on incorporating small amounts of nitrogen into the semiconductor alloy gallium indium arsenide.  2, record 4, English, - gallium%20indium%20arsenide

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Composé III-V ternaire (combinaison d'arsenic, d'indium et de gallium), utilisé comme semi-conducteur dans la fabrication de composants optoélectroniques.  1, record 4, French, - ars%C3%A9niure%20d%27indium%20et%20de%20gallium

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It wasn’t until the 1980's when a new material, GaAlAs(gallium aluminum arsenide) was developed, that a rapid growth in the use of LEDs began to occur. GaAlAs technology provided superior performance over previously available LEDs. The brightness was over 10 times greater than standard LEDs due to increased efficiency and multi-layer, heterojunction type structures. The voltage required for operation was lower resulting in a total power savings. The LEDs could also be easily pulsed or multiplexed. This allowed their use in variable message and outdoor signs. LED were also designed into such application as bar code scanners, fiber optic data transmission systems, and medical equipment. Although this was a major breakthrough in LED Technology, there were still significant drawbacks to GaAlAs material. First, it was only available in a red 660nm wavelength. Second, the light output degradation of GaAlAs is greater than that of standard technology.  2, record 5, English, - gallium%20aluminum%20arsenide

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Composé III-V ternaire, résultant de la combinaison de l'arsenic, du gallium et de l'aluminium, utilisé comme semi-conducteur dans la fabrication de composants optoélectroniques.  1, record 5, French, - ars%C3%A9niure%20d%27aluminium%20et%20de%20gallium

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... semiconductors with different refractive indices(such as gallium arsenide and aluminum arsenide).  1, record 6, English, - aluminum%20arsenide

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Composé III-V binaire, utilisé comme semi-conducteur dans la fabrication de composants optoélectroniques.  2, record 6, French, - ars%C3%A9niure%20d%27aluminium

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Composé utilisé dans la fabrication de diodes laser.  2, record 6, French, - ars%C3%A9niure%20d%27aluminium

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Gallium arsenide.... Prepared by melting together stoichiometric quantities of Ga and As in a sealed ampoule.... GaAs is of interest for microwave diodes and high-temperature rectifiers and transistors.  3, record 7, English, - gallium%20arsenide

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gallium arsenide : form recommended by the IUPAC(International Union of Pure and Applied Chemistry).  4, record 7, English, - gallium%20arsenide

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Composé III-V binaire (combinaison de l'arsenic et du gallium), utilisé comme semi-conducteur dans la fabrication de composants optoélectroniques.  3, record 7, French, - ars%C3%A9nure%20de%20gallium

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arsénure de gallium : forme recommandée par l'UICPA (Union internationale de chimie pure et appliquée).  4, record 7, French, - ars%C3%A9nure%20de%20gallium

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Sustancia cristalina usada como semiconductor. Muy tóxico.  1, record 7, Spanish, - arseniuro%20de%20galio

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Fórmula Química: GaAs  1, record 7, Spanish, - arseniuro%20de%20galio

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CHAMPS is a modular microgravity research furnace developed for the National Research Council' s Space Division. It was flown in a Get-Away-Special(GAS) container aboard the space shuttle STS-67 in June 1993 to investigate GaAs [gallium arsenide] crystal growth by liquid phase electroepitaxy(LPEE). Combining the advantages of both dedicated and generic experimental facilities, CHAMPS allows investigators to specify their own experimental configuration while at the same time providing them with generic peripherals. Configurable hardware included thermal and gradient furnace, levitator, etc., while generic peripherals included control and data acquisition, thermal insulation, and ground support equipment.  2, record 8, English, - configurable%20hardware%20for%20multidisciplinary%20projects%20in%20space

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The investigator who... undertook to grow a doping superlattice was Klaus Ploog of the Max Planck Institute for Solid-State Physics in Stuttgart... The host material was gallium arsenide; the dopants were silicon atoms, serving donors, and beryllium atoms, serving as acceptors. The method of growth was molecular-beam epitaxy.  2, record 9, English, - host%20material

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Source: "Solid-State Superlattices", by Gottfried H. Doehler, in Scientific American.  3, record 9, English, - host%20material

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Le matériau hôte (pour le premier super-réseau de dopage) était l'arséniure de gallium, les dopants étaient des atomes de silicium (les donneurs) et des atomes de béryllium (les accepteurs).  2, record 9, French, - mat%C3%A9riau%20h%C3%B4te

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A thin sheet of semiconductor (photovoltaic material) made by cutting it from a single crystal or ingot.  3, record 10, English, - wafer

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[A wafer is] a round disc of semiconductor material [that is] most commonly silicon, although gallium arsenide and other semiconductor materials are also used. Wafers are a few millimeters thick and are available in a variety of diameters... Many integrated circuits are simultaneously fabricated on wafers during the wafer fabrication process.  4, record 10, English, - wafer

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Slice [is] another term for wafer, most often used during wafer manufacture where wafers are sliced from an ingot.  4, record 10, English, - wafer

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Disque de faible épaisseur découpé dans un lingot monocristallin de matériau semiconducteur et utilisé comme matériau de base pour réaliser un ou plusieurs circuits ou composants en une seule fois.  4, record 10, French, - tranche

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Fina plancha de material semiconductor [...] sobre la que se construyen microcircuitos [...]  2, record 10, Spanish, - oblea

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To create a wafer from silicon, purified polycrystalline silicon is heated to a molten liquid. A small piece of solid silicon is placed on the molten liquid, and as the seed is pulled from the molten liquid, it cools to form a single crystal ingot. The crystal ingot is ground to a uniform diameter and diamond saw blade cuts the ingot into thin slices of less than 1 mm thickness. This silicon wafer is then chemically polished to give it a reflective luster.  2, record 11, English, - silicon%20wafer

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[A wafer is] a round disc of semiconductor material [that is] most commonly silicon, although gallium arsenide and other semiconductor materials are also used.  3, record 11, English, - silicon%20wafer

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Blank silicon wafer.  4, record 11, English, - silicon%20wafer

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Une fois recouverte de résine, la tranche de silicium est soumise à une lumière visible ou à un rayonnement ultraviolet (UV) à travers un masque représentant le motif recherché.  4, record 11, French, - tranche%20de%20silicium

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[...] les principales phases de la fabrication d'un circuit intégré comprennent dans la plupart des cas [...] la réalisation collective des circuits sur des rondelles de silicium, par application d'un procédé technologique [...]  3, record 11, French, - tranche%20de%20silicium

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Plaquette de silicium vierge.  5, record 11, French, - tranche%20de%20silicium

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Pedazo de un lingote de silicio sobre el que se fabrican circuitos integrados.  2, record 11, Spanish, - oblea%20de%20silicio

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Después de su fabricación y prueba, la oblea se corta en diminutas pastillas o plaquetas que luego se utilizan como componentes de circuitos integrados terminados siendo encapsulados posteriormente.  2, record 11, Spanish, - oblea%20de%20silicio

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Laser in which excitation occurs in a semiconductor normally excited by an electric field.  2, record 12, English, - semiconductor%20laser

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... the semiconductor laser takes the form of a rectangular slab of semiconductor held between two metal connectors .... Two end faces are optically polished or cleaved parallel to each other ....  3, record 12, English, - semiconductor%20laser

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Semiconductor lasers.... Laser action takes place when free electrons in the conduction band are stimulated to recombine with holes in the valence band.... Suitable materials are the direct-gap semiconductors, such as gallium arsenide.  4, record 12, English, - semiconductor%20laser

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Lasers à semi-conducteurs. [...] Les cristaux utilisés sont toujours de très petites dimensions et la cavité est le plus souvent constituée par leurs faces terminales, clivées ou polies pour les rendre planes et parallèles. [...] Les diodes lasers les plus couramment disponibles sont les diodes à arséniure de gallium [...]  5, record 12, French, - laser%20%C3%A0%20semi%2Dconducteur

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An IBM team lead by Mordehai Heiblum constructed a semiconductor sandwich : two outer layers of gallium aluminium arsenide(the transistor's emitter and collector terminals, analogous to the source and chain) and the ultrathin "filling" of gallium arsenide as the base. Electrons fall from one of the higher-bandgap GA1As layers into the low-bandgap GaAs interior, picking up speed like a boulder rolling down a mountainside.  1, record 13, English, - semiconductor%20sandwich

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Pluriel : des sandwichs; des sandwiches.  2, record 13, French, - sandwich%2Dsemiconducteurs

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sandwichs (pl.) : Cette graphie, puisée des Rectifications de l'orthographe recommandées par le Conseil supérieur de la langue française, est attestée dans le Petit Robert (2006).  3, record 13, French, - sandwich%2Dsemiconducteurs

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The Advanced Solar Gallium Arsenide Array(ASGA) will provide valuable information on the performance of gallium arsenide(GaAs) solar arrays and on the effects of the low Earth orbit environment on their components. These solar cells, already being used in a trial form to power the Soviet MIR space station, are expected to form the backbone of the next generation of compact, high power-to-weight ratio European solar energy generators.  3, record 14, English, - advanced%20solar%20gallium%20arsenide%20array

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A laser scriber can be used in place of a diamond scriber for dicing wafers of silicon, gallium arsenide, and other semiconductor materials used in the production of semiconductor diodes, transistors, and integrated circuits. The laser beam vaporizes grooves in the upper active face of the wafer, after which a breaking operation separates the chips along the grooves. This process can also be used for scribing sapphire and ceramic substrates. It is also used to drill holes in any of these substances.  1, record 15, English, - laser%20scriber

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GaAs :gallium arsenide. A III-V compound semiconductor material used for making optoelectronic devices and high-frequency ICs.  2, record 16, English, - III%2DV%20compound

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Semiconducteur composé de deux éléments, dont l'un appartient au groupe III du tableau périodique (p.ex. gallium) et l'autre au groupe V (p.ex. arsenic). Il existe également des composés II-VI (p.ex. zinc-soufre). [Source : Rodot-Dupas, p. 11]  2, record 16, French, - compos%C3%A9%20III%2DV

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[...] membrane en semiconducteur composé III-V (système InGaAlAs sur InP).  3, record 16, French, - compos%C3%A9%20III%2DV

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A team of engineers at Varo has devised a near-infrared image intensifier based on a Generation III configuration and a photocathode of the negative electron affinity indium gallium arsenide type.  1, record 17, English, - negative%20electron%20affinity%20indium%20gallium%20arsenide

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Varo a mis au point un intensificateur d'image sensible à l'infrarouge proche, à tube de Génération III et photocathode à l'arséniure d'indiumgallium NEA.  1, record 17, French, - ars%C3%A9niure%20d%27indiumgallium%20%C3%A0%20affinit%C3%A9%20aux%20%C3%A9lectrons%20n%C3%A9gatifs

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Photocathodes made from indium gallium arsenide were studied in the early 1980s, but the demand for image-intensifier tubes operating at these wavelengths was not significant until the arrival of other near-infrared devices such as solid-state lasers and fibre-optic systems.  1, record 18, English, - near%2Dinfrared%20device

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Au début des années 1980, on a étudié des photocathodes en arséniure d'indium-gallium mais la demande pour des tubes sensibles dans cette région du spectre est restée insignifiante jusqu'à l'apparition d'autres types de systèmes proche infrarouge tels que lasers état-solide et dispositifs à fibre optique.  1, record 18, French, - dispositif%20proche%20infrarouge

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Although based on the same microchannel plates as the earlier Generation 11 tubes, these have photocathodes made from the semiconductor gallium arsenide(GaAs) rather than the tri-alkali compounds of Generation 11 devices.  1, record 19, English, - tri%2Dalkali%20compounds

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Ces tubes utilisent les mêmes matrices de microcanaux que ceux de Génération II mais leurs photocathodes sont à semi-conducteur en arséniure de gallium (GaAs) semi-conducteur au lieu de composés tri-alcalins.  1, record 19, French, - compos%C3%A9s%20tri%2Dalcalins

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Standard image-intensifier tubes use gallium arsenide negative electron affinity NEA based photocathodes.  1, record 20, English, - gallium%20arsenide%20negative%20electron%20affinity%20%28NEA%29

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Au début des années 1980, on a étudié des photocathodes en arséniure d'indium-gallium sensibles aux électrons négatifs, mais la demande pour des tubes sensibles dans cette région du spectre est restée insignifiante jusqu'à l'apparition d'autres types de systèmes proche infrarouge tels que lasers état-solide et dispositifs à fibre optique.  1, record 20, French, - arseniure%20de%20gallium%20sensible%20aux%20%C3%A9lectrons%20n%C3%A9gatifs%20%28NEA%29

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Very promising early results have been obtained with the so-called CLEFT process, in which a thin semiconductor film is grown on and then cleaved from a substrate. CLEFT is an acronym for cleavage of lateral epitaxial films for transfer. The method can be used with silicon, gallium arsenide, and probably other semiconductors.  1, record 21, English, - CLEFT%20process

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Cellule solaire en couche mince - Procédé par clivage. On détache la couche active d'arséniure de gallium de son support qui peut être utilisé à nouveau [...] On pratique des ouvertures dans une résine photosensible déposée sur toute la surface puis carbonisée. Elle sert de masque à la croissance cristalline. Celle-ci se développe d'abord uniquement par ces ouvertures, puis s'étend latéralement sur toute la surface de la résine. [...] On colle l'ensemble côté croissance cristalline, sur un support en verre. On sépare aisément les deux parties: croissance et substrat, par clivage (Cleft Process).  1, record 21, French, - proc%C3%A9d%C3%A9%20par%20clivage

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In Schottky-barrier diodes, the rectifying junction is formed at the interface of a deposited metal layer and a semiconductor crystal, usually silicon or gallium arsenide.  3, record 22, English, - Schottky%2Dbarrier%20diode

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Une diode Schottky, ou diode à porteurs chauds, est constituée d'un contact métal-semiconducteur (en général du silicium N), le contact présente des propriétés de redressement.  3, record 22, French, - diode%20Schottky

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it is a gallium aluminium arsenide laser  2, record 23, English, - GaAlAs%20laser

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An electric cell for the direct conversion of sunlight to electric power using crystal gallium arsenide.  1, record 24, English, - gallium%20arsenide%20solar%20cell

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Principaux matériaux pour photopiles. (...) 3- L'arséniure de gallium. Il s'agit du semi-conducteur offrant les meilleures performances : jusqu'à 22% de rendement pour des photopiles à l'arséniure de gallium monocristallin.  3, record 24, French, - photopile%20%C3%A0%20l%27ars%C3%A9niure%20de%20gallium

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