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GATE BIAS [1 record]
Record 1 - internal organization data 2022-09-28
Record 1, English
Record 1, Subject field(s)
- Semiconductors (Electronics)
- Electronic Components
Record 1, Main entry term, English
- single-electron transistor
1, record 1, English, single%2Delectron%20transistor
correct
Record 1, Abbreviations, English
- SET 1, record 1, English, SET
correct
Record 1, Synonyms, English
- quantum-effect transistor 2, record 1, English, quantum%2Deffect%20transistor
correct
- quantum effect transistor 3, record 1, English, quantum%20effect%20transistor
correct
- quantum-effect device 4, record 1, English, quantum%2Deffect%20device
correct, less frequent
Record 1, Textual support, English
Record number: 1, Textual support number: 1 DEF
[A] sensitive electronic device based on the Coulomb blockade effect. 5, record 1, English, - single%2Delectron%20transistor
Record number: 1, Textual support number: 1 CONT
Such a rapid variation in conductance makes the single-electron transistor an ideal device for high-precision electrometry. In this type of application the SET has two gate electrodes, and the bias voltage is kept close to the Coulomb blockade voltage to enhance the sensitivity of the current to changes in the gate voltage. 6, record 1, English, - single%2Delectron%20transistor
Record 1, French
Record 1, Domaine(s)
- Semi-conducteurs (Électronique)
- Composants électroniques
Record 1, Main entry term, French
- transistor à un électron
1, record 1, French, transistor%20%C3%A0%20un%20%C3%A9lectron
correct, masculine noun
Record 1, Abbreviations, French
Record 1, Synonyms, French
- transistor à effet quantique 2, record 1, French, transistor%20%C3%A0%20effet%20quantique
correct, masculine noun
- dispositif à effet quantique 3, record 1, French, dispositif%20%C3%A0%20effet%20quantique
correct, masculine noun, less frequent
Record 1, Textual support, French
Record number: 1, Textual support number: 1 DEF
[Dispositif] électronique basé sur l'effet de blocage de Coulomb. 4, record 1, French, - transistor%20%C3%A0%20un%20%C3%A9lectron
Record number: 1, Textual support number: 1 CONT
Les caractéristiques de faible tension de polarisation d'un transistor à un électron doté d'un îlot Nb [niobium] et de fils en Al [aluminium] correspondaient à des transitions résonantes entre des états quantiques, déterminés par la charge transférée par le biais du circuit. 5, record 1, French, - transistor%20%C3%A0%20un%20%C3%A9lectron
Record 1, Spanish
Record 1, Textual support, Spanish
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