TERMIUM Plus^®

Record 1,  Textual support,  English

Record number: 1, Textual support number: 1 DEF

[A] sensitive electronic device based on the Coulomb blockade effect.  5, record 1, English, - single%2Delectron%20transistor

Record number: 1, Textual support number: 1 CONT

Such a rapid variation in conductance makes the single-electron transistor an ideal device for high-precision electrometry. In this type of application the SET has two gate electrodes, and the bias voltage is kept close to the Coulomb blockade voltage to enhance the sensitivity of the current to changes in the gate voltage.  6, record 1, English, - single%2Delectron%20transistor

Record 1,  Textual support,  French

Record number: 1, Textual support number: 1 DEF

[Dispositif] électronique basé sur l'effet de blocage de Coulomb.  4, record 1, French, - transistor%20%C3%A0%20un%20%C3%A9lectron

Record number: 1, Textual support number: 1 CONT

Les caractéristiques de faible tension de polarisation d'un transistor à un électron doté d'un îlot Nb [niobium] et de fils en Al [aluminium] correspondaient à des transitions résonantes entre des états quantiques, déterminés par la charge transférée par le biais du circuit.  5, record 1, French, - transistor%20%C3%A0%20un%20%C3%A9lectron

Record 1,  Textual support,  Spanish

Record 2,  Textual support,  English

Record number: 2, Textual support number: 1 CONT

In its most basic form, a thyristor has three terminals : anode(positive terminal), cathode(negative terminal), and gate(control terminal). The gate controls the flow of current between the anode and cathode.  2, record 2, English, - gate

Record 2,  Textual support,  French

Record number: 2, Textual support number: 1 DEF

Électrode de commande d'un thyristor [et d'un triac].  2, record 2, French, - g%C3%A2chette

Record 2,  Textual support,  Spanish

Record number: 2, Textual support number: 1 CONT

Un tiristor es un dispositivo semiconductor de cuatro capas de estructura PNPN con tres uniones PN. Tiene tres terminales: ánodo, cátodo y puerta [...]  1, record 2, Spanish, - puerta

Record 3,  Textual support,  English

Record number: 3, Textual support number: 1 CONT

Gate trigger current varies inversely with gate pulse width in such a way that it is evident that there is a minimum gate charge required to trigger the thyristor.  1, record 3, English, - gate%20trigger%20current

Record 3,  Textual support,  French

Record 3,  Textual support,  Spanish

Record 4,  Textual support,  English

Record number: 4, Textual support number: 1 CONT

In order to reduce surge current failures during turn on..., gate current should be 5 to 10 times the maximum gate current... required to trigger the triac.  1, record 4, English, - gate%20current

Record number: 4, Textual support number: 1 OBS

This term applies to SCRs, thyristors and triacs.  2, record 4, English, - gate%20current

Record 4,  Textual support,  French

Record number: 4, Textual support number: 1 CONT

Le courant de gâchette est désigné par IG. Sa valeur maximale nécessaire pour amorcer tous les thyristors d'une série [...] est IGT.  1, record 4, French, - courant%20de%20g%C3%A2chette

Record number: 4, Textual support number: 1 OBS

Thyristors et triacs.  2, record 4, French, - courant%20de%20g%C3%A2chette

Record 4,  Textual support,  Spanish

Record 5,  Textual support,  English

Record number: 5, Textual support number: 1 CONT

Current steering diodes. Reverse gate current increases the impedance of the device("attempted turn-off"). Reverse gate current experienced during a high current discharge event may permanently damage the device.  1, record 5, English, - reverse%20gate%20current

Record 5,  Textual support,  French

Record 5,  Textual support,  Spanish

Record 6,  Textual support,  English

Record number: 6, Textual support number: 1 CONT

The main characteristics of the GTO [gate turn off] thyristor are as follows :... A recovery time that is the minimum time during which the extinction current must be maintained to prevent spontaneous refiring.  2, record 6, English, - extinction%20current

Record number: 6, Textual support number: 1 OBS

extinction current: term officially approved by the Electronics and Telecommunications Terminology Committee.  3, record 6, English, - extinction%20current

Record 6,  Textual support,  French

Record number: 6, Textual support number: 1 CONT

Cas particulier : grandeur d'asservissement. L'expérience a montré que la grandeur d'asservissement convenant le mieux pour le cas particulier est le courant d'extinction circulant dans la résistance commune.  2, record 6, French, - courant%20d%27extinction

Record number: 6, Textual support number: 1 OBS

courant d'extinction : terme uniformisé par le Comité d’uniformisation des termes de l’électronique et des télécommunications (CUTEL).  3, record 6, French, - courant%20d%27extinction

Record 6,  Textual support,  Spanish

Record 7,  Textual support,  English

Record number: 7, Textual support number: 1 DEF

A function, usually represented graphically, relating the anode-to-cathode voltage to the principal current with gate current, where applicable, as a parameter.  1, record 7, English, - anode%2Dto%2Dcathode%20voltage%2Dcurrent%20characteristic

Record 7,  Textual support,  French

Record number: 7, Textual support number: 1 DEF

Relation entre la tension d'anode et le courant principal.  1, record 7, French, - caract%C3%A9ristique%20tension%2Dcourant%20d%27anode%2Dcathode

Record 7,  Textual support,  Spanish

Record 8,  Textual support,  English

Record number: 8, Textual support number: 1 CONT

The federal government won’t enrich its current auto scrappage plan's minimal rewards, even after heavy lobbying by auto maker and dealer groups, leaving it up to companies like Ford, Chrysler and Hyundai, which are already providing their own cash-for-clunker programs... Chrysler's program offers $500 to $1, 500 for trading in a 1995 or older vehicle, plus the government's $300 cash, bus pass or bicycle offer, in lieu of offering whatever the dealer figures is the wholesale value of the car. Hyundai was the first Canadian auto maker out of the gate with such a promotion, when it launched its similar $500-$1, 000 scrappage incentive two weeks ago.  3, record 8, English, - cash%2Dfor%2Dclunker

Record 8,  Textual support,  French

Record number: 8, Textual support number: 1 CONT

Malgré l'absence d'un programme gouvernemental ambitieux de prime à la casse au Canada, le constructeur automobile Hyundai a décidé d'offrir un rabais du genre à ses clients. La filiale canadienne du fabricant sud-coréen annonce son offre d'un rabais de 500 à 1000 $ à ceux qui ramènent leur vieux véhicule en échange d'une nouvelle voiture plus efficace en matière de consommation d'essence. Cette prime à la casse s'ajoute aux autres offres promotionnelles de Hyundai et au programme plus frugal du gouvernement fédéral canadien, qui offre 300 $ pour l'échange d'un vieux véhicule.  2, record 8, French, - prime%20%C3%A0%20la%20casse

Record 8,  Textual support,  Spanish

Record 9,  Textual support,  English

Record number: 9, Textual support number: 1 CONT

A MOSFET transistor is operating in enhancement mode when the gate voltage attracts the carrier charges, although no current flows through the gate because it is insulated from the carrier channel.  2, record 9, English, - enhancement%20mode

Record 9,  Textual support,  French

Record number: 9, Textual support number: 1 DEF

Mode de fonctionnement d'un transistor à effet de champ, notamment d'un MOS [métal-oxyde-semiconducteur], normalement bloqué, c'est-à-dire dans lequel il faut appliquer une tension appropriée à la grille pour faire passer un courant plus ou moins intense de la source au drain par enrichissement de la zone du canal en porteurs minoritaires pour créer le canal.  3, record 9, French, - mode%20d%27enrichissement

Record number: 9, Textual support number: 1 CONT

[...] le transistor D-MOSFET peut fonctionner sous deux régimes : régime d'appauvrissement [et] régime d'enrichissement. Comme la grille est isolée du canal, on peut y appliquer une tension positive ou négative. Il fonctionne en régime d'appauvrissement lorsqu'une tension négative est appliquée sur la grille et en régime d'enrichissement lorsque c'est une tension positive qui y est appliquée.  4, record 9, French, - mode%20d%27enrichissement

Record 9,  Textual support,  Spanish

Record number: 9, Textual support number: 1 CONT

En la región activa de un MOSFET [transistor de efecto de campo de metal-óxido-semiconductor] en modo de enriquecimiento, la capacitancia de entrada y la transconductancia es casi independiente del voltaje de la compuerta y la capacitancia de salida es independiente del voltaje del drenador. Este puede proveer una potencia de amplificación muy lineal.  3, record 9, Spanish, - modo%20de%20enriquecimiento

Record 10,  Textual support,  English

Record number: 10, Textual support number: 1 DEF

A type of MOS [metal-oxide semiconductor] transistor in which no current flows in the absence of an input control signal on the control terminal(called the gate) of the transistor.  1, record 10, English, - enhancement%20MOS

Record number: 10, Textual support number: 1 OBS

MOSFET: metal-oxide semiconductor field-effect transistor.  3, record 10, English, - enhancement%20MOS

Record 10,  Textual support,  French

Record number: 10, Textual support number: 1 OBS

MOS : métal-oxyde-semiconducteur.  3, record 10, French, - MOS%20%C3%A0%20enrichissement

Record 10,  Textual support,  Spanish

Record number: 10, Textual support number: 1 OBS

MOS: metal-óxido-semiconductor.  2, record 10, Spanish, - transistor%20MOS%20de%20enriquecimiento

Record 11,  Textual support,  English

Record number: 11, Textual support number: 1 DEF

A doped region in a semiconductor material that is used to provide a current channel or channel region for a MOS-gated or insulated gate semiconductor transistor, such as a metal oxide semiconductor field effect transistor(MOSFET), an IGFET or an insulated gate bipolar transistor(IGBT).  1, record 11, English, - base%20region

Record 11,  Textual support,  French

Record number: 11, Textual support number: 1 DEF

Région dopée d'un semiconducteur qui fournit un canal de courant ou zone de canal à un transistor ou semiconducteur à grille isolée ou à commande par grille MOS (metal oxide semiconductor).  2, record 11, French, - zone%20de%20base

Record 11,  Textual support,  Spanish

Record 12,  Textual support,  English

Record number: 12, Textual support number: 1 CONT

Electron trap generation in the gate oxide is a major reliability problem, since it can cause stress-induced leakage current and oxide breakdown. In this paper, traps are created either by the substrate hole injection or the Fowler-Nordheim injection. The attention is focused on how detrapping affects the generated traps. The detrapping is achieved by different techniques, including electron-hole recombination, and field or thermally assisted tunnelling.  1, record 12, English, - detrapping

Record 12,  Textual support,  French

Record number: 12, Textual support number: 1 OBS

L'injection et le dépiégeage des charges s'effectue en des temps de l'ordre de 100 ms [...].  1, record 12, French, - d%C3%A9pi%C3%A9geage

Record 12,  Textual support,  Spanish

Record 13,  Textual support,  English

Record number: 13, Textual support number: 1 CONT

The ISFET(Ion Sensitive Field Effect Transistor) methodoly for ion measurements is developed on the basis of the MOSFET(Metal Oxide Silicon Field Effect Transistor). The first attempts to use the ISFET as pH sensor were made already in 1970. The basic principle underlying the MOSFET is the control of a current flowing between two semiconductor electrodes. Drain and source are placed on the same element, with a third electrode, the gate, between them.  3, record 13, English, - ion%2Dsensitive%20field%20effect%20transistor

Record 13,  Textual support,  French

Record 13,  Textual support,  Spanish

Record 14,  Textual support,  English

Record number: 14, Textual support number: 1 DEF

The time that it takes a gate circuit to shut off a current.  1, record 14, English, - turn%2Doff%20time

Record 14,  Textual support,  French

Record number: 14, Textual support number: 1 OBS

De l'impulsion.  1, record 14, French, - temps%20de%20coupure

Record 14,  Textual support,  Spanish

Record 15,  Textual support,  English

Record number: 15, Textual support number: 1 DEF

Switched semiconductor which, unlike the classic thyristor, requires no external turn-off circuit to switch off current, but can be blocked by a controlled electrode, or gate.  1, record 15, English, - GTO%20thyristor

Record 15,  Textual support,  French

Record number: 15, Textual support number: 1 DEF

Semi-conducteur commandable qui, à la différence des thyristors classiques, ne nécessite pas de circuit d'extinction extérieur pour interrompre la circulation du courant, mais peut être bloqué au moyen de l'électrode de commande (gâchette).  1, record 15, French, - thyristor%20GTO

Record number: 15, Textual support number: 1 OBS

Technique de l'ingénieur, 9, 1973, Lexique E 1075, p. 7, Glossaire 58.  2, record 15, French, - thyristor%20GTO

Record 15,  Textual support,  Spanish

Record 16,  Textual support,  English

Record number: 16, Textual support number: 1 CONT

As soon as a positive voltage is applied to T2, this transistor will conduct, a negative GTO gate current will flow, and capacitor C1 will act as a voltage source of 10V.  1, record 16, English, - gate%20current

Record number: 16, Textual support number: 1 OBS

This term applies to field-effect transistors.  2, record 16, English, - gate%20current

Record 16,  Textual support,  French

Record number: 16, Textual support number: 1 CONT

Dès qu'une tension positive est appliquée à T2, ce transistor conduit, un courant de grille négatif s'écoule et la capacité C1 agit comme une source de tension de 10V.  1, record 16, French, - courant%20de%20grille

Record number: 16, Textual support number: 1 OBS

Ce terme s'applique aux transistors à effet de champ.  2, record 16, French, - courant%20de%20grille

Record 16,  Textual support,  Spanish

Record 17,  Textual support,  English

Record number: 17, Textual support number: 1 OBS

In the practical circuit(...), the positive gate drive current is fed from the positive DC rail via the emitter-follower transistor T1 and the parallel connection of the zener diode D2 and capacitor C1 to the gate of the GTO switch.  1, record 17, English, - emitter%2Dfollower%20transistor

Record 17,  Textual support,  French

Record number: 17, Textual support number: 1 OBS

Dans le circuit simple (...), un courant positif s'écoule de l'alimentation continue dans la grille du GTO [gate-turn off switch], par l'intermédiaire du transistor T1 monté en émetteur suiveur de la diode zener D2 et d'une capacité C1 montée en parallèle.  1, record 17, French, - transistor%20en%20%C3%A9metteur%20suiveur

Record 17,  Textual support,  Spanish

Record 18,  Textual support,  English

Record number: 18, Textual support number: 1 OBS

A balance is also required between forward on-state voltage drop, anode current turn-off properties, turn-on and turn-off gate drive levels.  1, record 18, English, - on%2Dstate%20voltage%20drop

Record 18,  Textual support,  French

Record number: 18, Textual support number: 1 OBS

Il est nécessaire d'assurer l'équilibre entre la chute vers l'avant à l'état d'amorçage, les propriétés de blocage du courant d'anode et les niveaux de commande positive et négative de grille.  1, record 18, French, - chute%20de%20tension%20%C3%A0%20l%27%C3%A9tat%20d%27amor%C3%A7age

Record 18,  Textual support,  Spanish