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Record 1,  Textual support,  English

Record number: 1, Textual support number: 1 DEF

An insulated-gate field-effect transistor(IGFET) in which the insulating layer between each gate electrode and the channel is native oxide material.  4, record 1, English, - metal%2Doxide%20semiconductor%20field%2Deffect%20transistor

Record number: 1, Textual support number: 1 OBS

Transistors with nitride in the insulating layer are also called MOSFETs.  4, record 1, English, - metal%2Doxide%20semiconductor%20field%2Deffect%20transistor

Record number: 1, Textual support number: 2 OBS

metal-oxide semiconductor field-effect transistor: term standardized by IEC.  4, record 1, English, - metal%2Doxide%20semiconductor%20field%2Deffect%20transistor

Record 1,  Textual support,  French

Record number: 1, Textual support number: 1 DEF

Transistor à effet de champ à grille isolée dans lequel la couche isolante entre chaque électrode de grille et le canal est un oxyde.  1, record 1, French, - transistor%20%C3%A0%20effet%20de%20champ%20m%C3%A9tal%2Doxyde%20semiconducteur

Record number: 1, Textual support number: 1 OBS

Le terme s'applique aussi aux transistors dont la couche isolante contient du nitride.  1, record 1, French, - transistor%20%C3%A0%20effet%20de%20champ%20m%C3%A9tal%2Doxyde%20semiconducteur

Record number: 1, Textual support number: 2 OBS

transistor à effet de champ métal-oxyde semiconducteur : terme normalisé par la CEI.  1, record 1, French, - transistor%20%C3%A0%20effet%20de%20champ%20m%C3%A9tal%2Doxyde%20semiconducteur

Record 1,  Textual support,  Spanish

Record number: 1, Textual support number: 1 DEF

Semiconductor caracterizado por una impedancia de entrada extremadamente alta, una impedancia activa bastante alta, y velocidades de cambios bajos.  3, record 1, Spanish, - transistor%20de%20efecto%20de%20campo%20MOS

Record number: 1, Textual support number: 1 CONT

Transistor de efecto de campo metal-óxido-semiconductor: transistor de efecto de campo que tiene una puerta aislada del sustrato semiconductor por una capa delgada de óxido de silicio. Cuando [está] en el modo de empobrecimiento, una tensión negativa de puerta reduce los portadores de carga normalmente presentes en el canal conductor con polarización nula de puerta.  4, record 1, Spanish, - transistor%20de%20efecto%20de%20campo%20MOS

Record number: 1, Textual support number: 1 OBS

Al aplicarse un voltaje (negativo respecto al substrato) a una compuerta o acceso, este transistor se conducirá como un conductor, y al aplicarse una diferencia de potencial entre la fuente y la carga, habrá un flujo de corriente.  3, record 1, Spanish, - transistor%20de%20efecto%20de%20campo%20MOS

Record number: 1, Textual support number: 2 OBS

transistor de efecto de campo de semiconductor de óxido metálico: Los equivalentes que indican que MOS (metal-óxido-semiconductor) es un semiconductor no son precisos. En realidad, el semiconductor es una de las tres capas que componen esta estructura junto con el metal y el óxido.  5, record 1, Spanish, - transistor%20de%20efecto%20de%20campo%20MOS

Record 2,  Textual support,  English

Record number: 2, Textual support number: 1 DEF

A doped region in a semiconductor material that is used to provide a current channel or channel region for a MOS-gated or insulated gate semiconductor transistor, such as a metal oxide semiconductor field effect transistor(MOSFET), an IGFET or an insulated gate bipolar transistor(IGBT).  1, record 2, English, - base%20region

Record 2,  Textual support,  French

Record number: 2, Textual support number: 1 DEF

Région dopée d'un semiconducteur qui fournit un canal de courant ou zone de canal à un transistor ou semiconducteur à grille isolée ou à commande par grille MOS (metal oxide semiconductor).  2, record 2, French, - zone%20de%20base

Record 2,  Textual support,  Spanish

Record 3,  Textual support,  English

Record number: 3, Textual support number: 1 CONT

Electron trap generation in the gate oxide is a major reliability problem, since it can cause stress-induced leakage current and oxide breakdown. In this paper, traps are created either by the substrate hole injection or the Fowler-Nordheim injection. The attention is focused on how detrapping affects the generated traps. The detrapping is achieved by different techniques, including electron-hole recombination, and field or thermally assisted tunnelling.  1, record 3, English, - detrapping

Record 3,  Textual support,  French

Record number: 3, Textual support number: 1 OBS

L'injection et le dépiégeage des charges s'effectue en des temps de l'ordre de 100 ms [...].  1, record 3, French, - d%C3%A9pi%C3%A9geage

Record 3,  Textual support,  Spanish

Record 4,  Textual support,  English

Record number: 4, Textual support number: 1 CONT

The ISFET(Ion Sensitive Field Effect Transistor) methodoly for ion measurements is developed on the basis of the MOSFET(Metal Oxide Silicon Field Effect Transistor). The first attempts to use the ISFET as pH sensor were made already in 1970. The basic principle underlying the MOSFET is the control of a current flowing between two semiconductor electrodes. Drain and source are placed on the same element, with a third electrode, the gate, between them.  3, record 4, English, - ion%2Dsensitive%20field%20effect%20transistor

Record 4,  Textual support,  French

Record 4,  Textual support,  Spanish