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GATE REGION [5 records]

Record 1 2008-03-12

English

Subject field(s)
  • Atmospheric Physics
DEF

A cold, very squally wind, descending from the east or southeast in the region of the Danube "Iron Gate" through the Carpathians, continuing westward over Belgrade, thence spreading northward to the Rumanian and Hungarian borderlands and southward as far as Nish.

OBS

In winter it brings temperatures down to below -29°C and it is cool even in summer, when it is also dusty. It usually occurs with a depression over the Adriatic and high pressure over southern Russia, a frequent situation in winter. It is usually explained as a jet-effect wind through the Iron Gate, giving speeds well above the gradient wind, but J. Küttner (1940) regards it rather as a katabatic wind intermediate between foehn and bora. The kossava has a marked diurnal variation, with its maximum occurring between 5 a.m. and 10 a.m.

French

Domaine(s)
  • Physique de l'atmosphère
DEF

Vent froid, irrégulier descendant de l'est et du sud-est dans la région de la «Porte de fer» du Danube vers les Carpathes et continuant vers l'ouest sur Belgrade, les frontières roumaines et hongroises, puis vers le sud jusqu'à Nish.

Spanish

Save record 1

Record 2 2007-07-04

English

Subject field(s)
  • Semiconductors (Electronics)
  • Physics of Solids
DEF

A doped region in a semiconductor material that is used to provide a current channel or channel region for a MOS-gated or insulated gate semiconductor transistor, such as a metal oxide semiconductor field effect transistor(MOSFET), an IGFET or an insulated gate bipolar transistor(IGBT).

French

Domaine(s)
  • Semi-conducteurs (Électronique)
  • Physique des solides
DEF

Région dopée d'un semiconducteur qui fournit un canal de courant ou zone de canal à un transistor ou semiconducteur à grille isolée ou à commande par grille MOS (metal oxide semiconductor).

Spanish

Save record 2

Record 3 1989-12-18

English

Subject field(s)
  • Semiconductors (Electronics)
CONT

[In a MOS transistor], when there is no voltage applied to the gate, the two p-type regions, called source and drain, are electrically insulated from each other by the n-type region which surrounds them.

French

Domaine(s)
  • Semi-conducteurs (Électronique)
CONT

Le transistor MOS est essentiellement un dispositif à trois électrodes, la source et le drain, analogues à l'émetteur et au collecteur d'un transistor bipolaire, et la grille, qui est l'électrode de commande [...].

Spanish

Save record 3

Record 4 1989-12-18

English

Subject field(s)
  • Semiconductors (Electronics)
OBS

In the insulated-gate FET structure a thin dielectric barrier is used to isolate the gate and the channel. The control voltage applied to the gate terminal induces an electric field across the dielectric barrier and modulates the free-carrier concentration in the channel region.

French

Domaine(s)
  • Semi-conducteurs (Électronique)
CONT

Si la tension de grille est inférieure à la tension d'inversion, dite tension de seuil, il y a entre source et drain une jonction P.N polarisée en inverse, qui bloque la conduction.

Spanish

Save record 4

Record 5 1983-06-07

English

Subject field(s)
  • Semiconductors (Electronics)
DEF

(In a field-effect transistor) The region connecting source and drain, the conductivity of which is modulated by the gate voltage.

French

Domaine(s)
  • Semi-conducteurs (Électronique)
DEF

[Dans un transistor à effet de champ,] zone de semiconducteur dopé dans lequel passeront les charges entre les électrodes appelées respectivement source et drain.

Spanish

Save record 5

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