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HETEROJUNCTION [12 records]

Record 1 2012-04-17

English

Subject field(s)
  • Semiconductors (Electronics)
CONT

It wasn’t until the 1980's when a new material, GaAlAs(gallium aluminum arsenide) was developed, that a rapid growth in the use of LEDs began to occur. GaAlAs technology provided superior performance over previously available LEDs. The brightness was over 10 times greater than standard LEDs due to increased efficiency and multi-layer, heterojunction type structures. The voltage required for operation was lower resulting in a total power savings. The LEDs could also be easily pulsed or multiplexed. This allowed their use in variable message and outdoor signs. LED were also designed into such application as bar code scanners, fiber optic data transmission systems, and medical equipment. Although this was a major breakthrough in LED Technology, there were still significant drawbacks to GaAlAs material. First, it was only available in a red 660nm wavelength. Second, the light output degradation of GaAlAs is greater than that of standard technology.

French

Domaine(s)
  • Semi-conducteurs (Électronique)
DEF

Composé III-V ternaire, résultant de la combinaison de l'arsenic, du gallium et de l'aluminium, utilisé comme semi-conducteur dans la fabrication de composants optoélectroniques.

Spanish

Save record 1

Record 2 2007-07-26

English

Subject field(s)
  • Physics of Solids
  • Electronic Devices
  • Semiconductors (Electronics)
DEF

A junction, typically p-n, formed of two different materials (e.g. Si and SiGe, or GaAs and AlGaAs).

French

Domaine(s)
  • Physique des solides
  • Dispositifs électroniques
  • Semi-conducteurs (Électronique)
DEF

Jonction, normalement du type N et du type P, entre deux matériaux (par exemple métal-semiconducteur) différant entre eux.

CONT

[Pour faire des cellules solaires, les] chercheurs de la NASA avaient utilisé une couche de GaAs d'une épaisseur de seulement 5 µ recouverte d'un film très mince (70 angströms) d'or, tandis que ceux de Varian ont choisi de construire une cellule à hétérojonction p-GaAs/p-A'GaAs, sur un substrat du type n+GaAs.

Spanish

Save record 2

Record 3 1992-10-17

English

Subject field(s)
  • Telecommunications
  • Semiconductors (Electronics)

French

Domaine(s)
  • Télécommunications
  • Semi-conducteurs (Électronique)

Spanish

Save record 3

Record 4 1991-05-06

English

Subject field(s)
  • Semiconductors (Electronics)

French

Domaine(s)
  • Semi-conducteurs (Électronique)

Spanish

Save record 4

Record 5 1991-02-22

English

Subject field(s)
  • Lasers and Masers

French

Domaine(s)
  • Masers et lasers

Spanish

Save record 5

Record 6 1990-06-18

English

Subject field(s)
  • Lasers and Masers

French

Domaine(s)
  • Masers et lasers

Spanish

Save record 6

Record 7 1989-02-01

English

Subject field(s)
  • Lasers and Masers
  • Semiconductors (Electronics)

French

Domaine(s)
  • Masers et lasers
  • Semi-conducteurs (Électronique)

Spanish

Save record 7

Record 8 1986-03-27

English

Subject field(s)
  • Semiconductors (Electronics)
DEF

(Pulfrey/68) Junction between two semiconductor materials having different band gaps. (Semiconductors 1968).

French

Domaine(s)
  • Semi-conducteurs (Électronique)
OBS

(Électricité solaire CNRS, p.7).

Spanish

Save record 8

Record 9 1985-05-29

English

Subject field(s)
  • Semiconductors (Electronics)
  • Lasers and Masers

French

Domaine(s)
  • Semi-conducteurs (Électronique)
  • Masers et lasers
Key term(s)
  • diode laser à double hétérojonction

Spanish

Save record 9

Record 10 1984-10-22

English

Subject field(s)
  • Semiconductors (Electronics)
  • Telecommunications Facilities

French

Domaine(s)
  • Semi-conducteurs (Électronique)
  • Installations de télécommunications

Spanish

Save record 10

Record 11 1984-10-22

English

Subject field(s)
  • Electronic Devices
  • Lasers and Masers
DEF

a laser diode that has two different heterojunctions, the difference being primarily in the stepped changes in refractive indices of the material in the vicinity of the P-N junction.

French

Domaine(s)
  • Dispositifs électroniques
  • Masers et lasers

Spanish

Save record 11

Record 12 1984-10-22

English

Subject field(s)
  • Lasers and Masers

French

Domaine(s)
  • Masers et lasers

Spanish

Save record 12

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