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IMPURITY DIFFUSION [4 records]

Record 1 2010-04-01

English

Subject field(s)
  • Semiconductors (Electronics)
DEF

A junction formed by the solid-state diffusion of an impurity into a semiconductor of the opposite type.

French

Domaine(s)
  • Semi-conducteurs (Électronique)

Spanish

Save record 1

Record 2 2007-07-04

English

Subject field(s)
  • Equipment (Chemistry)
  • Semiconductors (Electronics)
  • Physics of Solids
CONT

A diffusion reactor has a reaction tube or a reaction chamber which is cylindrically shaped. A plurality of semiconductor wafers are placed in the reaction chamber. The reaction chamber is heated at a predetermined temperature and further predetermined gases such as phosphate, nitrogen and oxygen are supplied to the reaction chamber, so that an impurity such as phosphorus is diffused into the semiconductor wafers.

French

Domaine(s)
  • Équipement (Chimie)
  • Semi-conducteurs (Électronique)
  • Physique des solides
CONT

Méthodes de diffusion. On place les plaquettes de silicium dans un four à haute température [...] Le réacteur de diffusion est à tube fermé ou à tube ouvert. Dans le premier cas, on met le semiconducteur et sa source en dopant dans un tube scellé qu'on introduit dans un four. Dans le système à tube ouvert, un flux gazeux inerte contenant les espèces dopantes balaye le réacteur durant toute la diffusion [...]

Spanish

Save record 2

Record 3 2007-07-03

English

Subject field(s)
  • Semiconductors (Electronics)
DEF

Introduction of impurities into semiconductor material by a solid-state diffusion process.

French

Domaine(s)
  • Semi-conducteurs (Électronique)
DEF

Introduction d'impuretés dans un semiconducteur par un procédé de diffusion à l'état solide.

Spanish

Save record 3

Record 4 1992-10-29

English

Subject field(s)
  • Industrial Techniques and Processes
  • Printed Circuits and Microelectronics
DEF

The second part of a two-part diffusion. It is the part of the operation in which the diffusant deposited during predeposition is diffused further into the wafer to achieve the desired impurity profile.

French

Domaine(s)
  • Techniques industrielles
  • Circuits imprimés et micro-électronique
DEF

Deuxième étape de la diffusion, au cours de laquelle on porte les tranches à une température voisine de 1 200°C, sans apport supplémentaire de dopant, afin de le faire pénétrer plus profondément dans le substrat les atomes d'impuretés déposés pendant la prédiffusion.

Spanish

Save record 4

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