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INDIRECT GAP SEMICONDUCTOR [1 record]

Record 1 2012-04-17

English

Subject field(s)
  • Semiconductors (Electronics)
CONT

It has been assumed that the Si delta-layers are characterized by the Si bulk band-structure in the theoretical modelling. Si is an indirect band-gap semiconductor, while GaAs is of direct type. This means that a Si electron experiences the Si delta-layer as a quantum well, while the Si delta-layer instead constitutes a barrier for a GaAs electron.

French

Domaine(s)
  • Semi-conducteurs (Électronique)
DEF

Semi-conducteur dont les électrons du haut de la bande et du bas de la bande de conduction n'ont pas les mêmes vecteurs.

Spanish

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