TERMIUM Plus®

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POLYSILICON GATE [3 records]

Record 1 2010-05-19

English

Subject field(s)
  • Semiconductors (Electronics)
CONT

A segmented multiple gate MOSFET utilizing a single level of polysilicon gate layer was fabricated and characterized. Data is presented for both p-and n-channel devices in which the polysilicon gate layer is segmented into three separate lateral gates by alternate p-and n-type doping.

Key term(s)
  • multiple gate MOS transistor

French

Domaine(s)
  • Semi-conducteurs (Électronique)
CONT

Mémoires à transfert de charges : Ce sont des registres à décalage constitués d'une succession d'électrodes, qui se présentent comme des transistors MOS à grilles multiples.

Spanish

Save record 1

Record 2 1992-04-10

English

Subject field(s)
  • Telecommunications
  • Semiconductors (Electronics)

French

Domaine(s)
  • Télécommunications
  • Semi-conducteurs (Électronique)
OBS

transistor MOS intégré

Spanish

Save record 2

Record 3 1985-09-27

English

Subject field(s)
  • Telecommunications
OBS

Source Telecommunications Journal January 1985 p. all.

French

Domaine(s)
  • Télécommunications
OBS

Source Journal des télécommunications janvier 1985 p. all.

Spanish

Save record 3

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